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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP47/48/49/50 DESCRIPTION *With TO-220C package *High sustaining voltage : VCEO(sus) = 250~400V *1A rated collector current APPLICATIONS *High voltage and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP47 VCBO Collector-base voltage TIP48 TIP49 TIP50 TIP47 VCEO Collector-emitter voltage TIP48 TIP49 TIP50 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 350 400 450 500 250 300 350 400 5 1 2 0.6 40 2 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP47 Collector-emitter sustaining voltage TIP48 IC=30mA; IB=0 TIP49 TIP50 VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP47 TIP48 ICEX Collector cut-off current TIP49 TIP50 TIP47 TIP48 ICEO Collector cut-off current TIP49 TIP50 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCE=250V; IB=0 VCE=300V; IB=0 VEB=5V; IC=0 IC=0.3A ; VCE=10V IC=1A ; VCE=10V IC=0.2A ; VCE=10V 30 10 10 VCE=450V; VBE=0 VCE=500V; VBE=0 VCE=150V; IB=0 VCE=200V; IB=0 IC=1A ;IB=0.2A IC=1A ; VCE=10V VCE=350V; VBE=0 VCE=400V; VBE=0 350 400 CONDITIONS MIN 250 300 SYMBOL TIP47/48/49/50 TYP. MAX UNIT VCEO(SUS) V 1.0 1.5 V V 1 mA 1 mA 1 150 mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time VCC=400V; 5IB1 = -2.5IB2 = IC = 6A RL = 66.7C 0.5 3.0 0.3 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP47/48/49/50 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP47/48/49/50 4 |
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